47. Optical isotropy in structurally anisotropic halide scintillators: Ab initio study
G. Shwetha, and V. Kanchana,
Phys. Rev. B, 86, 115209, 2012.

46. Electronic topological transition in LaSn3 under pressure
Swetarekha Ram, V. Kanchana, G. Vaitheeswaran, A. Svane, S. B. Dugdale, and N. E. Christensen
Phys. Rev. B, 85, 174531, 2012.

45. Compressibility and structural stability of CeN fromexperiment and theory: The B1-B2 transition
J. Staun Olsen, J.-E. Jørgensen, L. Gerward, G. Vaitheeswaran,V. Kanchana, A. Svane
J. Alloys and Comps. 533, 29, 2012.

44. Lattice instability and martensitic transformation in LaAg predicted from first-principles theory
G. Vaitheeswaran, V. Kanchana, X. Zhang, Yanming Ma, A. Svane, S. N. Kaul
J. Phys.: Cond. Matt., 24, 075402, 2012.

43.Electronic structure and mechanical properties of Sc3AC (A = Al, Ga, In, Tl) and Sc3BN (B = Al, In): An Ab initio study
V. Kanchana, Swetarekha Ram
Intermetallics, 23, 39-48, 2012.